Samsung to unveil even faster HBM4 chip early next year

[phillynews215]

Samsung unveiled its first sixth-generation high-bandwidth memory (HBM4) chip at the SEDEX 2025 expo in South Korea last month. But the company has no plans to stand still, as it has reportedly developed an even faster HBM4 chip which it will unveil early next year during the International Solid-State Circuits Conference (ISSCC).



Samsung's newer HBM4 chip is reportedly nearly 40% faster



A report from TheElec claims that Samsung will unveil a faster HBM4 chip at the ISSCC expo from February 15 to 19, 2026, in San Francisco, California, USA. During the ISSCC 2026 media briefing held at Space Share in Jung-gu, Seoul, on November 26, SK Hynix Fellow Kim Dong-gyun, who is also an ISSCC Korea Committee member, revealed that Samsung and SK Hynix will unveil their newer HBM4 chips next year.



Samsung's first 36GB HBM4 chip had a bandwidth of 2.4TB/s, while its upcoming HBM4 chip will reportedly have a bandwidth of up to 3.3TB/s. That is an improvement of 37.5% over the previous chip. This improvement is reportedly a result of a completely redesigned stacked structure and interface. It also improves the efficiency of the chip.




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During the press briefing, Kim Dong-gyun said, “DRAM is continuously evolving to meet bandwidth and power efficiency demands. Samsung Electronics’ HBM4 and SK Hynix’s LPDDR6 and GDDR7 are both products that reflect this trend.“



After Samsung suffered a huge setback in the HBM segment due to heat-related issues, it improved the performance of its HBM chips through continuous design improvements. It has apparently used 1c DRAM to make its HBM4 chips, while Micron and SK Hynix have used 1b DRAM to make their competing chips. This should offer improved performance compared to HBM4 chips from rival brands.


The post Samsung to unveil even faster HBM4 chip early next year appeared first on SamMobile.



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