Samsung reveals major breakthrough that may revolutionize memory chips

[phillynews215]

Samsung Electronics is one of the biggest players in the global memory chip market. The company is heavily invested in advancing the technology to maintain its dominant position.



To that end, researchers at Samsung Electronics have revealed a major breakthrough technology that significantly reduces power consumption and boosts the capacity of memory chips.



This may unlock more growth for Samsung in the memory market



They've announced a new ultra-low-power memory technology that's based on ferroelectric transistors (FeFET) which increases capacity without requiring any power increase.



The FeFET-based memory developed using a ferroelectric material was found to have reduced power consumption by up to 96% in the string structure compared to conventional NAND memory.



This means that the memory chips can store significantly more data without requiring more power. This would prove to be very useful for devices where power efficiency is paramount, such as mobile devices, edge computing, and artificial intelligence.



This goes a long way in addressing the fundamental limit of NAND flash memory, where when power is reduced so is capacity and when capacity is increased so is the power requirement. It's pertinent to note that this only exists as a research project but Samsung announcing it is a signal that eventually we may see this technology being utilized in the company's memory products.



There's already incredible demand for memory products and with the market heading into super cycle territory due to increased demand from AI chipmakers, more power efficient and higher density memory products can't come soon enough.


The post Samsung reveals major breakthrough that may revolutionize memory chips appeared first on SamMobile.



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